onsemi 1200 V 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3 UJ3D1210KS
- RS Stock No.:
- 648-524
- Mfr. Part No.:
- UJ3D1210KS
- Manufacturer:
- onsemi
N
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Subtotal (1 bag of 2 units)*
PHP594.63
(exc. VAT)
PHP665.986
(inc. VAT)
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In Stock
- 576 unit(s) ready to ship from another location
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Units | Per Unit | Per Bag* |
|---|---|---|
| 2 + | PHP297.315 | PHP594.63 |
*price indicative
- RS Stock No.:
- 648-524
- Mfr. Part No.:
- UJ3D1210KS
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode & Rectifier | |
| Package Type | TO-247-3 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | UJ3 | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Peak Reverse Current Ir | 110μA | |
| Maximum Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.96mm | |
| Width | 5.03 mm | |
| Length | 15.90mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode & Rectifier | ||
Package Type TO-247-3 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series UJ3 | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Peak Reverse Current Ir 110μA | ||
Maximum Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 20.96mm | ||
Width 5.03 mm | ||
Length 15.90mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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