onsemi 650 V 8 A Schottky Diode & Rectifier Merged Pin Schottky 2-Pin TO-220-2 UJ3D06508TS
- RS Stock No.:
- 648-516
- Mfr. Part No.:
- UJ3D06508TS
- Manufacturer:
- onsemi
N
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Subtotal (1 bag of 2 units)*
PHP255.36
(exc. VAT)
PHP286.00
(inc. VAT)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Bag* |
|---|---|---|
| 2 + | PHP127.68 | PHP255.36 |
*price indicative
- RS Stock No.:
- 648-516
- Mfr. Part No.:
- UJ3D06508TS
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 55A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 50μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.19 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 15.37mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series UJ3 | ||
Diode Configuration Single | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 55A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 50μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Width 4.19 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 15.37mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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