ROHM 650 V 12 A Schottky Diode & Rectifier SiC Schottky D2PAK SCS212ANHRTRL
- RS Stock No.:
- 331-677
- Mfr. Part No.:
- SCS212ANHRTRL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 2 units)*
PHP814.29
(exc. VAT)
PHP912.004
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 1,000 unit(s) shipping from January 05, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP407.145 | PHP814.29 |
| 20 - 198 | PHP366.56 | PHP733.12 |
| 200 - 998 | PHP338.195 | PHP676.39 |
| 1000 - 1998 | PHP313.76 | PHP627.52 |
| 2000 + | PHP281.03 | PHP562.06 |
*price indicative
- RS Stock No.:
- 331-677
- Mfr. Part No.:
- SCS212ANHRTRL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Mount Type | Surface | |
| Product Type | Schottky Diode & Rectifier | |
| Package Type | TO-263-2L | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | SiC Schottky | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 170A | |
| Peak Reverse Current Ir | 240μA | |
| Maximum Forward Voltage Vf | 1.55V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Mount Type Surface | ||
Product Type Schottky Diode & Rectifier | ||
Package Type TO-263-2L | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current Ifsm 170A | ||
Peak Reverse Current Ir 240μA | ||
Maximum Forward Voltage Vf 1.55V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive Grade SiC Schottky Barrier Diode is designed for high performance power applications, featuring negligible recovery time and current, which ensures faster switching and improved efficiency. It also offers a wide creepage distance of at least 5.10mm. Common applications include On board chargers, EV chargers, DC to DC converters, and wireless chargers.
AEC-Q101 qualified
Low forward voltage
Temperature independent switching behaviour
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