STMicroelectronics, Operational Amplifier, 3.1 MHz, 8-Pin 36V SO-8

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Subtotal 10 units (supplied on a continuous strip)*

PHP1,975.70

(exc. VAT)

PHP2,212.80

(inc. VAT)

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Units
Per Unit
10 - 99PHP197.57
100 - 249PHP191.64
250 - 499PHP185.89
500 +PHP180.31

*price indicative

Packaging Options:
RS Stock No.:
261-4766P
Mfr. Part No.:
TSB582IYDT
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Operational Amplifier

Mount Type

Surface

Package Type

SO-8

Number of Channels

6

Pin Count

8

GBP - Gain Bandwidth Product

3.1MHz

Maximum Supply Voltage

36V

Minimum Supply Voltage

36V

Input Bias Current

5 nA

Vos - Input Offset Voltage

2.4 mV

Minimum Operating Temperature

-40°C

Slew Rate

2V/μs

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

TSB582

Output Current

200mA

Automotive Standard

AEC-Q2, AEC-Q100, AEC-Q3, AEC-Q1

COO (Country of Origin):
CN

200 mA output current with thermal shutdown and output current limiter, 3.1 MHz, 36 V, BiCMOS dual operational amplifier


The TSB582 is a unity gain stable, dual operational amplifier with high voltage and high current capability, featuring internal protections against overtemperature and current overload conditions. In addition, the TSB582 has enhanced ESD and RF noise immunity.

It typically outputs up to 200 mA per channel to drive low resistance inductive loads such as angle resolvers, lineout cables and piezo actuators.

The two high current output amplifiers of the TSB582 feature the advantage of driving loads directly in bridge tied mode or, connected in parallel, allow to double the output sink/source current. Additionally, the TSB582 is available in the two space-saving packages, SO8 with exposed pad and DFN8 with wettable flanks and exposed pad. Where both of them are qualified for automotive applications over a temperature range of -40 °C to +125 °C.

Key features


  • Wide supply voltage: 4 V - 36 V

  • High output current 200 mA

  • Rail-to-rail output, low rail input

  • Gain bandwidth product: 3.1 MHz

  • High slew rate: 2 V/μs

  • Internal thermal shutdown & output current limiter

  • Enhanced RF noise immunity

  • High tolerance to ESD: 4 kV HBM

  • Extended temperature range: -40 °C to 125 °C

  • Automotive grade

  • Low noise 45 nV/√Hz @ 1 kHz

  • Icc (typ.) = 2.3 mA

  • Unity gain stable

  • Low offset 2.4 mV max. (25 °C) / 3 mV max. (full temperature range)

  • Low input bias current

  • Packages: SO8 & DFN8 exposed pad

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