DiodesZetex DMP Type P-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC DMP6110SSS-13
- RS Stock No.:
- 921-1151
- Mfr. Part No.:
- DMP6110SSS-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP549.10
(exc. VAT)
PHP615.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- 4,280 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 80 | PHP27.455 | PHP549.10 |
| 100 - 480 | PHP24.389 | PHP487.78 |
| 500 - 980 | PHP22.18 | PHP443.60 |
| 1000 - 2480 | PHP20.467 | PHP409.34 |
| 2500 + | PHP19.086 | PHP381.72 |
*price indicative
- RS Stock No.:
- 921-1151
- Mfr. Part No.:
- DMP6110SSS-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMP | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 3.95 mm | |
| Standards/Approvals | No | |
| Length | 4.95mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMP | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 3.95 mm | ||
Standards/Approvals No | ||
Length 4.95mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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