DiodesZetex DMP Type P-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin PowerDI5060 DMP34M4SPS-13
- RS Stock No.:
- 182-7376
- Mfr. Part No.:
- DMP34M4SPS-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP552.72
(exc. VAT)
PHP619.05
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,340 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP55.272 | PHP552.72 |
| 100 - 490 | PHP53.614 | PHP536.14 |
| 500 - 990 | PHP50.398 | PHP503.98 |
| 1000 - 1990 | PHP45.862 | PHP458.62 |
| 2000 + | PHP40.359 | PHP403.59 |
*price indicative
- RS Stock No.:
- 182-7376
- Mfr. Part No.:
- DMP34M4SPS-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060 | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 3W | |
| Typical Gate Charge Qg @ Vgs | 127nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Length | 6mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060 | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 3W | ||
Typical Gate Charge Qg @ Vgs 127nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Length 6mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. “Green” Device
Application
Switch
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