P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF

RS Stock No.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Manufacturer:: Infineon

P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB Infineon IRF5210PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

PHP4,508.00

(exc. VAT)

PHP5,049.00

(inc. VAT)

100 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Tube**
50 - 50	PHP90.16	PHP4,508.00
100 - 150	PHP87.455	PHP4,372.75
200 - 450	PHP84.832	PHP4,241.60
500 - 950	PHP82.286	PHP4,114.30
1000 +	PHP79.817	PHP3,990.85

**price indicative

RS Stock No.:: 919-4915
Mfr. Part No.:: IRF5210PBF
Manufacturer:: Infineon

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF

This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits

• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance

Applications

• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?

The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?

The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?

Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?

This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.

How should it be installed to ensure optimal performance?

Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	10.54mm
Number of Elements per Chip	1
Width	4.69mm
Typical Gate Charge @ Vgs	180 nC @ 10 V
Maximum Operating Temperature	+175 °C
Height	8.77mm
Minimum Operating Temperature	-55 °C