Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4915
- Mfr. Part No.:
- IRF5210PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP4,066.00
(exc. VAT)
PHP4,554.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,000 unit(s) shipping from February 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP81.32 | PHP4,066.00 |
| 100 - 150 | PHP78.88 | PHP3,944.00 |
| 200 - 450 | PHP76.514 | PHP3,825.70 |
| 500 - 950 | PHP74.218 | PHP3,710.90 |
| 1000 + | PHP71.991 | PHP3,599.55 |
*price indicative
- RS Stock No.:
- 919-4915
- Mfr. Part No.:
- IRF5210PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Length 10.54mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF
This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.
Features & Benefits
• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance
Applications
• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics
What is the maximum operating temperature for this component?
The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.
How does the low on-resistance benefit circuit performance?
The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.
Is this suitable for applications in automotive systems?
Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.
What kind of circuit configurations can it be integrated into?
This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.
How should it be installed to ensure optimal performance?
Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.
Related links
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF5210PBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
