Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4772
Mfr. Part No.:: IRF4905PBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP4,919.60

(exc. VAT)

PHP5,509.95

(inc. VAT)

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In Stock

50 unit(s) ready to ship from another location
Plus 1,000 unit(s) shipping from January 22, 2026

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Units	Per Unit	Per Tube*
50 - 50	PHP98.392	PHP4,919.60
100 - 150	PHP95.44	PHP4,772.00
200 - 450	PHP92.577	PHP4,628.85
500 - 950	PHP89.80	PHP4,490.00
1000 +	PHP87.106	PHP4,355.30

*price indicative

RS Stock No.:: 919-4772
Mfr. Part No.:: IRF4905PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	180nC
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 180nC
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF

This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.

Features & Benefits

• High continuous drain current capability of 74A supports demanding applications

• Maximum drain-source voltage of 55V enables effective power management

• Low on-resistance of 20mΩ improves energy efficiency

• Designed as an enhancement mode MOSFET for precise control

• Utilises a TO-220AB package for easy mounting and integration

Applications

• Used in DC-DC converters for efficient power conversion

• Ideal for motor control requiring substantial current management

• Employed in power supplies for streamlined operation

• Suitable for thermal management in high-load environments

• Used in automation systems for dependable switching

How does the low on-resistance benefit circuit design?

The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.

What is the significance of using a TO-220AB package?

The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.

Can this component handle high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.

What kind of applications require this MOSFET's high continuous drain current?

The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.

How does the gate-threshold voltage impact its performance?

A gate threshold voltage ranging from 2V to 4V ensures reliable switching behaviour, contributing to precise control in various electronic circuits.