Infineon HEXFET Type P-Channel MOSFET, 230 A, 75 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 249-6869
- Mfr. Part No.:
- AUIRF6215
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP9,094.40
(exc. VAT)
PHP10,185.75
(inc. VAT)
Stock information currently inaccessible
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP181.888 | PHP9,094.40 |
| 100 - 100 | PHP163.706 | PHP8,185.30 |
| 150 + | PHP147.329 | PHP7,366.45 |
*price indicative
- RS Stock No.:
- 249-6869
- Mfr. Part No.:
- AUIRF6215
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
Related links
- Infineon HEXFET Type P-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 AUIRF6215
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220