Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4882
- Mfr. Part No.:
- IRL540NPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
PHP2,829.00
(exc. VAT)
PHP3,168.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 300 unit(s) shipping from August 31, 2026
- Plus 50 unit(s) shipping from September 07, 2026
- Plus 1,000 unit(s) shipping from November 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP56.58 | PHP2,829.00 |
| 100 - 150 | PHP54.882 | PHP2,744.10 |
| 200 - 450 | PHP53.236 | PHP2,661.80 |
| 500 + | PHP51.639 | PHP2,581.95 |
*price indicative
- RS Stock No.:
- 919-4882
- Mfr. Part No.:
- IRL540NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Height 8.77mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF
This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.
Features & Benefits
• Continuous drain current capability of 36A for demanding applications
• Low Rds(on) of 44mΩ minimises power losses during operation
• Enhancement mode design improves switching characteristics for efficiency
• Power dissipation rating of up to 140W accommodates high-performance scenarios
• Operating temperature range from -55°C to +175°C allows versatility
• Through hole mounting facilitates easy integration into existing systems
Applications
• Power management in industrial automation systems
• Electric motor control in robotics
• DC-DC converters in renewable energy systems
• Power supplies requiring efficient switching functionality
• Consumer electronics for effective power distribution
What are the maximum voltage and current ratings?
The maximum drain-source voltage is 100V, with a continuous drain current of 36A.
How does the low Rds(on) improve performance?
A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.
What is the significance of the enhancement mode?
This mode allows for improved control over operation, enabling efficient switching and application versatility.
Can it be used in high-temperature environments?
Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.
How should it be mounted for optimal performance?
It is designed for through hole mounting, ensuring secure installation and connectivity in circuits.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL540NPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 AUIRF540Z
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF540ZPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220