N-Channel MOSFET, 17 A, 55 V, 3-Pin TO-220AB Infineon IRFZ24NPBF

RS Stock No.:: 919-4851
Mfr. Part No.:: IRFZ24NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 17 A, 55 V, 3-Pin TO-220AB Infineon IRFZ24NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

PHP1,146.60

(exc. VAT)

PHP1,284.20

(inc. VAT)

350 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per Unit	Per Tube**
50 - 50	PHP22.932	PHP1,146.60
100 - 150	PHP22.244	PHP1,112.20
200 - 450	PHP21.577	PHP1,078.85
500 +	PHP20.93	PHP1,046.50

**price indicative

RS Stock No.:: 919-4851
Mfr. Part No.:: IRFZ24NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFZ24NPBF

This MOSFET is designed to provide exceptional performance in a range of electronic applications. It serves as a key component in automation and control systems, enhancing both efficiency and reliability. Its capabilities are crucial for optimising system operations within the electrical and mechanical industries.

Features & Benefits

• High current handling capability of up to 17A for demanding applications
• Maximum operating voltage of 55V for diverse usage
• Low RDS(on) for minimised power loss during operation
• High thermal tolerance up to +175°C for consistent reliability
• Through-hole mounting for straightforward installation and maintenance
• Utilises enhancement mode for enhanced control in circuits

Applications

• Employed in power management systems to improve efficiency
• Suitable for motor control that require high current
• Utilised in automotive electronics for robust performance
• Ideal for HVAC systems where dependability is essential
• Applied in renewable energy systems for enhanced durability

What operating temperature range is suitable for optimal performance?

The product operates effectively from -55°C to +175°C, ensuring durability under various conditions.

How can I integrate this into my current circuit design?

It features a TO-220AB package type, simplifying integration into existing systems using standard PCB layouts.

What precautions should be taken during installation?

Ensure the mounting area is clean, and use appropriate thermal management to maximise performance and minimise heat-related issues.

Can it handle continuous high currents?

This product supports a continuous drain current of up to 17A, making it fit for high-demand applications.

What parameters should I monitor for optimal operation?

Monitor the drain-source voltage to ensure it remains within safe limits, specifically below 55V.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	17 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	70 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	20 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 17 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 70 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 20 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 8.77mm