Infineon HEXFET Type N-Channel MOSFET, 32 A, 100 V Enhancement, 3-Pin TO-252 IRFR3411TRPBF

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PHP1,270.08

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PHP1,422.48

(inc. VAT)

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Packaging Options:
RS Stock No.:
915-5014
Mfr. Part No.:
IRFR3411TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

130W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

2.39mm

Width

7.49 mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 32A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFR3411TRPBF


This MOSFET is crucial for high-power electronic applications, delivering robust performance with low on-resistance and a wide operating temperature range. Utilising HEXFET technology, it ensures efficient operation, making it suitable for various industrial and automation tasks. Its surface-mount DPAK (TO-252) package facilitates easy integration into electronic circuits, while the enhancement mode design optimises switching efficiency.

Features & Benefits


• Continuous drain current capability of 32A for versatile applications

• Maximum voltage rating of 100V for flexible usage

• Low RDS(on) of 44mΩ reduces power loss and heat generation

• Maximum power dissipation of 130W for enhanced durability

• Supports high-speed switching for improved circuit performance

• Surface mounting design simplifies PCB integration

Applications


• Utilised in DC-DC converters within industrial power supply systems

• Effective for motor control circuits in robotics and automation

• Suitable for power management in telecommunications equipment

• Employed in electronic lighting systems for energy efficiency

What type of PCB mounting methods are compatible with this device?


It is designed for surface mounting using vapour phase, infrared, or wave soldering techniques, ensuring versatility in assembly methods.

Can this device handle pulsed drain currents?


Yes, it is rated for pulsed drain currents up to 110A, allowing flexibility in transient load conditions without damage.

What is the thermal resistance for this component?


The junction-to-case thermal resistance is 1.2°C/W, enabling effective heat management during operation.

What temperature range can it operate in?


This MOSFET operates effectively between -55°C and +175°C, suited for extreme environmental conditions.

How does the gate charge impact performance?


With a typical gate charge of 48nC at 10V, it ensures faster switching times, reducing losses and improving efficiency in circuits.

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