Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V Enhancement TO-252
- RS Stock No.:
- 218-3105
- Mfr. Part No.:
- IRFR3410TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP66,528.00
(exc. VAT)
PHP74,511.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 15,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP22.176 | PHP66,528.00 |
| 6000 - 6000 | PHP21.289 | PHP63,867.00 |
| 9000 + | PHP20.736 | PHP62,208.00 |
*price indicative
- RS Stock No.:
- 218-3105
- Mfr. Part No.:
- IRFR3410TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 31Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 31Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.
RoHS Compliant
175°C Operating Temperature
Fast switching
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252 IRFR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252 IRFR3410TRPBF
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFIZ44NPBF