Infineon CoolMOS CE Type N-Channel MOSFET, 5.7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1
- RS Stock No.:
- 914-0223
- Mfr. Part No.:
- IPD80R1K0CEATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP791.40
(exc. VAT)
PHP886.40
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP79.14 | PHP791.40 |
| 20 - 90 | PHP73.055 | PHP730.55 |
| 100 - 190 | PHP67.835 | PHP678.35 |
| 200 - 490 | PHP63.355 | PHP633.55 |
| 500 + | PHP59.408 | PHP594.08 |
*price indicative
- RS Stock No.:
- 914-0223
- Mfr. Part No.:
- IPD80R1K0CEATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1
This MOSFET provides solutions for power management and general electronics, leveraging Advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.
Features & Benefits
• Increased power density allows for more Compact system designs
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High Peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under Rapid voltage changes
• Complies with RoHS standards for environmentally sound use
Applications
• Used in LED lighting solutions for retrofit installations
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial
How does the MOSFET enhance system performance in power management?
It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.
What are the benefits of using this device in LED lighting applications?
It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.
Is this compatible with high-frequency applications?
Yes, its low gate charge and high Peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.
What is the maximum continuous drain current for this device?
The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.
What temperature range can it operate within?
It operates effectively between -55°C and +150°C, offering versatility across different environments.
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1