Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- RS Stock No.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 15 units)*
PHP1,097.85
(exc. VAT)
PHP1,229.55
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 4,965 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 15 - 15 | PHP73.19 | PHP1,097.85 |
| 30 - 75 | PHP67.117 | PHP1,006.76 |
| 90 - 225 | PHP61.953 | PHP929.30 |
| 240 - 465 | PHP57.501 | PHP862.52 |
| 480 + | PHP55.882 | PHP838.23 |
*price indicative
- RS Stock No.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.42mm | |
| Length | 6.65mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.42mm | ||
Length 6.65mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
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- Infineon CoolMOS CE Type N-Channel MOSFET 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1
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- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252