N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS Stock No.:: 165-8015
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

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Price Each (On a Reel of 2500)**

PHP41.841

(exc. VAT)

PHP46.862

(inc. VAT)

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FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Reel**
2500 +	PHP41.841	PHP104,602.50

**price indicative

RS Stock No.:: 165-8015
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

IPD80R1K0CE MOSFET CoolMOS CE
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Series	CoolMOS™ CE
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Length	6.73mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.22mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	2.41mm

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

FREE delivery for over PHP7,000.00 (ex VAT)

Infineon CoolMOS™ CE Power MOSFET

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