Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1
- RS Stock No.:
- 892-2172
- Distrelec Article No.:
- 304-44-410
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 40 units)*
PHP1,540.00
(exc. VAT)
PHP1,724.80
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 5,800 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 40 - 40 | PHP38.50 | PHP1,540.00 |
| 80 - 160 | PHP34.686 | PHP1,387.44 |
| 200 - 360 | PHP33.947 | PHP1,357.88 |
| 400 - 760 | PHP33.28 | PHP1,331.20 |
| 800 + | PHP32.614 | PHP1,304.56 |
*price indicative
- RS Stock No.:
- 892-2172
- Distrelec Article No.:
- 304-44-410
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS P Series MOSFET, 30V Drain Source Voltage, 2A Maximum Continuous Drain Current - BSL308PEH6327XTSA1
Features and Benefits:
• Rated for 30V drain‑source voltage enabling 30V system use
• Continuous drain current capability of 2A supports moderate loads
• Typical gate charge -5nC at Vgs for faster switching response
• Power dissipation 500mW allows reliable thermal handling
• Qualified to AEC‑Q101 for automotive stress performance
Applications
• Ideal for load‑switching in battery management systems
• Used with DC‑DC converters requiring P‑channel devices
• Can be used for dual‑channel polarity protection circuits
• Suitable for compact surface‑mount power distribution boards
What gate voltage limits should I observe for safe operation?
How many transistors are contained on the chip and what does that enable?
What ambient temperature range can the device withstand during operation?
How does the package affect board placement and routing?
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