N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1

RS Stock No.:: 892-2125
Mfr. Part No.:: IPA086N10N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1

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PHP454.72

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PHP509.28

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Units	Per Unit	Per Pack**
5 - 20	PHP90.944	PHP454.72
25 - 95	PHP88.216	PHP441.08
100 - 245	PHP85.566	PHP427.83
250 - 495	PHP82.998	PHP414.99
500 +	PHP80.508	PHP402.54

**price indicative

RS Stock No.:: 892-2125
Mfr. Part No.:: IPA086N10N3GXKSA1
Manufacturer:: Infineon

Infineon OptiMOS™3 Power MOSFETs, 100V and over

Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1

This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.

Features & Benefits

• N-channel configuration optimises current management
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use

Applications

• Ideal for high-frequency switching in electronic devices
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance

What is the significance of the low on-resistance feature in this device?

The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.

Can this MOSFET be used in automotive applications?

Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.

How does the gate threshold voltage influence circuit function?

The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.

What types of circuits are most compatible with this power transistor?

This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.

How should the MOSFET be mounted for optimal performance?

The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	TO-220 FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	37.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.85mm
Typical Gate Charge @ Vgs	42 nC @ 10 V
Length	10.65mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Height	16.15mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C