Infineon OptiMOS 3 Type N-Channel MOSFET, 15 A, 250 V Enhancement, 3-Pin PG-TO-220
- RS Stock No.:
- 273-7457
- Mfr. Part No.:
- IPA600N25NM3SXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP365.31
(exc. VAT)
PHP409.148
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 496 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP182.655 | PHP365.31 |
| 10 - 18 | PHP166.12 | PHP332.24 |
| 20 - 98 | PHP162.81 | PHP325.62 |
| 100 - 248 | PHP152.215 | PHP304.43 |
| 250 + | PHP140.295 | PHP280.59 |
*price indicative
- RS Stock No.:
- 273-7457
- Mfr. Part No.:
- IPA600N25NM3SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | PG-TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type PG-TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is ideal for high frequency switching and synchronous rectification. This MOSFET is 100 percent avalanche tested and qualified according to JEDEC standard. It is a N channel MOSFET and halogen free according to IEC61249 2 21.
Pb free lead plating
RoHS compliant
Excellent gate charge
Very low on resistance
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin PG-TO-220 IPA600N25NM3SXKSA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK IPA029N06NM5SXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IPP200N25N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
