STMicroelectronics STripFET Type P-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerFLAT STL60P4LLF6
- RS Stock No.:
- 876-5689
- Mfr. Part No.:
- STL60P4LLF6
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 10 units)*
PHP682.08
(exc. VAT)
PHP763.93
(inc. VAT)
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In Stock
- Plus 2,710 unit(s) shipping from December 26, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP68.208 | PHP682.08 |
| 20 - 40 | PHP66.503 | PHP665.03 |
| 50 - 90 | PHP64.84 | PHP648.40 |
| 100 - 190 | PHP63.218 | PHP632.18 |
| 200 + | PHP61.638 | PHP616.38 |
*price indicative
- RS Stock No.:
- 876-5689
- Mfr. Part No.:
- STL60P4LLF6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.35mm | |
| Standards/Approvals | No | |
| Width | 5.4 mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6.35mm | ||
Standards/Approvals No | ||
Width 5.4 mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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