STMicroelectronics STripFET Type P-Channel MOSFET, 2 A, 30 V Enhancement, 3-Pin SOT-23 STR2P3LLH6
- RS Stock No.:
- 876-5702
- Mfr. Part No.:
- STR2P3LLH6
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 50 units)*
PHP864.50
(exc. VAT)
PHP968.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,100 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP17.29 | PHP864.50 |
| 100 - 200 | PHP16.771 | PHP838.55 |
| 250 - 450 | PHP16.268 | PHP813.40 |
| 500 - 950 | PHP15.78 | PHP789.00 |
| 1000 + | PHP15.307 | PHP765.35 |
*price indicative
- RS Stock No.:
- 876-5702
- Mfr. Part No.:
- STR2P3LLH6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.3mm | |
| Width | 1.75 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.3mm | ||
Width 1.75 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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