Toshiba DTMOSIV Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-252 TK12P60W,RVQ(S

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Subtotal (1 pack of 4 units)*

PHP481.38

(exc. VAT)

PHP539.144

(inc. VAT)

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  • 1,552 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
4 - 16PHP120.345PHP481.38
20 - 76PHP116.735PHP466.94
80 - 196PHP113.233PHP452.93
200 - 396PHP109.835PHP439.34
400 +PHP106.538PHP426.15

*price indicative

Packaging Options:
RS Stock No.:
827-6126
Mfr. Part No.:
TK12P60W,RVQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

600V

Series

DTMOSIV

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

340mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

150°C

Length

6.6mm

Height

2.3mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Toshiba


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