Texas Instruments NexFET Type N-Channel MOSFET, 134 A, 60 V Enhancement, 8-Pin SON CSD18531Q5A
- RS Stock No.:
- 827-4886
- Mfr. Part No.:
- CSD18531Q5A
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP505.88
(exc. VAT)
PHP566.585
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP101.176 | PHP505.88 |
| 25 - 95 | PHP74.688 | PHP373.44 |
| 100 - 245 | PHP73.184 | PHP365.92 |
| 250 - 495 | PHP65.128 | PHP325.64 |
| 500 + | PHP61.438 | PHP307.19 |
*price indicative
- RS Stock No.:
- 827-4886
- Mfr. Part No.:
- CSD18531Q5A
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 134A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NexFET | |
| Package Type | SON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.1W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.8mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 134A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NexFET | ||
Package Type SON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.1W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.8mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Related links
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SON
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SON
- Texas Instruments NexFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SON
- Texas Instruments NexFET Type N-Channel MOSFET 25 V Enhancement, 8-Pin SON
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SON
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SON CSD17307Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SON CSD18533Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 25 V Enhancement, 8-Pin SON CSD16321Q5