Texas Instruments NexFET N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SON
- RS Stock No.:
- 827-4684P
- Mfr. Part No.:
- CSD16321Q5
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied on a continuous strip)*
PHP3,111.20
(exc. VAT)
PHP3,484.55
(inc. VAT)
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Last RS stock
- Final 1,755 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 25 - 95 | PHP124.448 |
| 100 - 245 | PHP121.958 |
| 250 - 495 | PHP119.518 |
| 500 + | PHP117.124 |
*price indicative
- RS Stock No.:
- 827-4684P
- Mfr. Part No.:
- CSD16321Q5
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | NexFET | |
| Package Type | SON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | -8V, +10V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.1mm | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series NexFET | ||
Package Type SON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs -8V, +10V | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.1mm | ||
Length 6.1mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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