Texas Instruments NexFET N-Channel MOSFET, 5 A, 25 V Enhancement, 6-Pin SON CSD16301Q2
- RS Stock No.:
- 827-4672
- Mfr. Part No.:
- CSD16301Q2
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP253.46
(exc. VAT)
PHP283.88
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP25.346 | PHP253.46 |
| 20 - 40 | PHP24.585 | PHP245.85 |
| 50 - 90 | PHP23.113 | PHP231.13 |
| 100 - 190 | PHP21.033 | PHP210.33 |
| 200 + | PHP18.508 | PHP185.08 |
*price indicative
- RS Stock No.:
- 827-4672
- Mfr. Part No.:
- CSD16301Q2
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | NexFET | |
| Package Type | SON | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -8V, +10V | |
| Forward Voltage Vf | 800mV | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 2.3W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 2mm | |
| Height | 800μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series NexFET | ||
Package Type SON | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -8V, +10V | ||
Forward Voltage Vf 800mV | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 2.3W | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 2mm | ||
Height 800μm | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Related links
- Texas Instruments NexFET N-Channel MOSFET 25 V Enhancement, 6-Pin SON
- Texas Instruments NexFET N-Channel MOSFET 25 V Enhancement, 8-Pin SON
- Texas Instruments NexFET N-Channel MOSFET 25 V Enhancement, 8-Pin SON CSD16321Q5
- Texas Instruments NexFET N-Channel MOSFET 30 V Enhancement, 8-Pin SON
- Texas Instruments NexFET N-Channel MOSFET 60 V Enhancement, 8-Pin SON
- Texas Instruments NexFET N-Channel MOSFET 40 V Enhancement, 8-Pin SON
- Texas Instruments NexFET N-Channel MOSFET 60 V Enhancement, 8-Pin SON
- Texas Instruments NexFET N-Channel MOSFET 30 V Enhancement, 8-Pin SON CSD17307Q5A