Infineon HEXFET Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC IRF8313TRPBF

This image is representative of the product range

View all MOSFETs
Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
827-3903
Mfr. Part No.:
IRF8313TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

21.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Number of Elements per Chip

2

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links