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Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC IRF7317TRPBF

RS Stock No.:: 168-7930
Mfr. Part No.:: IRF7317TRPBF
Manufacturer:: Infineon

Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC IRF7317TRPBF

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RS Stock No.:: 168-7930
Mfr. Part No.:: IRF7317TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N, P
	Maximum Continuous Drain Current	5.3 A, 6.6 A
	Maximum Drain Source Voltage	20 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	46 mΩ, 98 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0.7V
	Minimum Gate Threshold Voltage	0.7V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Width	4mm
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	18 nC @ 4.5 V, 19 nC @ 4.5 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand Infineon
	Channel Type N, P
	Maximum Continuous Drain Current 5.3 A, 6.6 A
	Maximum Drain Source Voltage 20 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 46 mΩ, 98 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0.7V
	Minimum Gate Threshold Voltage 0.7V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Width 4mm
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 18 nC @ 4.5 V, 19 nC @ 4.5 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.5mm

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Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC IRF7317TRPBF

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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