N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB Infineon IRF520NPBF

RS Stock No.:: 919-4876
Mfr. Part No.:: IRF520NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 9.7 A, 100 V, 3-Pin TO-220AB Infineon IRF520NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

PHP1,539.45

(exc. VAT)

PHP1,724.20

(inc. VAT)

150 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per Unit	Per Tube**
50 - 50	PHP30.789	PHP1,539.45
100 - 150	PHP29.865	PHP1,493.25
200 - 450	PHP28.969	PHP1,448.45
500 - 950	PHP28.10	PHP1,405.00
1000 +	PHP27.258	PHP1,362.90

**price indicative

RS Stock No.:: 919-4876
Mfr. Part No.:: IRF520NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF

This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.

Features & Benefits

• High current capacity of 9.7A enhances performance
• Robust design ensures functionality in extreme conditions
• Low on-resistance of 200mΩ minimises power loss
• Fast switching capabilities improve efficiency
• Compatible with TO-220AB package for straightforward installation

Applications

• Power management in automation systems
• Switching in electrical circuits
• Motor drive circuits for improved efficiency
• High-frequency in electronics

How does the low on-resistance impact performance?

The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.

What is the significance of the temperature range?

The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.

Can this component handle short pulses of higher current?

Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.

What considerations should I have when installing?

Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.

How does the device perform under rapid switching conditions?

Its fast switching speed supports efficient operation in applications requiring quick response times, making it a versatile choice for modern electronic designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.7 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	48 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4.69mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	10.54mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	8.77mm