P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC Infineon IRF7241TRPBF

RS Stock No.:: 826-8844
Mfr. Part No.:: IRF7241TRPBF
Manufacturer:: Infineon

P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC Infineon IRF7241TRPBF

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Subtotal (1 pack of 20 units)**

PHP823.20

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PHP922.00

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Units	Per Unit	Per Pack**
20 - 20	PHP41.16	PHP823.20
40 - 180	PHP39.632	PHP792.64
200 - 380	PHP38.245	PHP764.90
400 - 780	PHP36.789	PHP735.78
800 +	PHP35.224	PHP704.48

**price indicative

RS Stock No.:: 826-8844
Mfr. Part No.:: IRF7241TRPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 6.2A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7241TRPBF

This MOSFET is designed for efficient power management in electronic circuits. With a P-channel configuration and a continuous drain current capability of 6.2A, it is suitable for various applications. Operating in enhancement mode further enhances its adaptability across different electronic devices, making it an essential component in automation and electrical systems.

Features & Benefits

• Supports a maximum drain-source voltage of 40V for strong performance
• Low on-resistance of 70mΩ improves efficiency and minimises heat generation
• Can withstand a maximum operating temperature of +150°C
• Broad gate voltage range allows for flexible design integration
• Single transistor configuration simplifies circuit layout and saves space
• Typical gate charge of 53nC at 10V enables quick switching

Applications

• Utilised in power management systems for automation
• Appropriate for driving loads in consumer electronics
• Employed in power conversion and regulation circuits
• Incorporated into various electrical industry
• Integrated into motor control and industrial automation systems

What is the significance of the low RDS(on) measurement?

A low RDS(on) measurement indicates lower power losses during operation, leading to improved efficiency and reduced heat generation.

How does the maximum gate-source voltage affect performance?

The maximum gate-source voltage range allows for wider compatibility with different driver circuits, ensuring reliable switching across various operating conditions.

What precautions should be taken during installation?

Ensure proper thermal management and verify that the operating conditions stay within the specified maximum ratings, particularly for voltage and temperature.

How does enhancement mode behaviour affect circuit design?

Enhancement mode operation means the transistor is off at zero gate voltage, resulting in lower power consumption during standby and enhancing overall circuit reliability.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.2 A
Maximum Drain Source Voltage	40 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	53 nC @ 10 V
Length	5mm
Transistor Material	Si
Number of Elements per Chip	1
Width	4mm
Height	1.5mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C