Name: Infineon HEXFET Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC
Brand: Infineon
SKU: 165-5933
Price: 22.24 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	6.2A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	53nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 6.2A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 53nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Length 5mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 6.2A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7241TRPBF

This MOSFET is designed for efficient power management in electronic circuits. With a P-channel configuration and a continuous drain current capability of 6.2A, it is suitable for various applications. Operating in enhancement mode further enhances its adaptability across different electronic devices, making it an essential component in automation and electrical systems.

Features & Benefits

• Supports a maximum drain-source voltage of 40V for strong performance

• Low on-resistance of 70mΩ improves efficiency and minimises heat generation

• Can withstand a maximum operating temperature of +150°C

• Broad gate voltage range allows for flexible design integration

• Single transistor configuration simplifies circuit layout and saves space

• Typical gate charge of 53nC at 10V enables quick switching

Applications

• Utilised in power management systems for automation

• Appropriate for driving loads in consumer electronics

• Employed in power conversion and regulation circuits

• Incorporated into various electrical industry

• Integrated into motor control and industrial automation systems

What is the significance of the low RDS(on) measurement?

A low RDS(on) measurement indicates lower power losses during operation, leading to improved efficiency and reduced heat generation.

How does the maximum gate-source voltage affect performance?

The maximum gate-source voltage range allows for wider compatibility with different driver circuits, ensuring reliable switching across various operating conditions.

What precautions should be taken during installation?

Ensure proper thermal management and verify that the operating conditions stay within the specified maximum ratings, particularly for voltage and temperature.

How does enhancement mode behaviour affect circuit design?

Enhancement mode operation means the transistor is off at zero gate voltage, resulting in lower power consumption during standby and enhancing overall circuit reliability.

Infineon HEXFET Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC