Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC IRF7303TRPBF
- RS Stock No.:
- 826-8841
- Mfr. Part No.:
- IRF7303TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
PHP830.52
(exc. VAT)
PHP930.18
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 80 unit(s) shipping from August 31, 2026
- Plus 1,100 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP41.526 | PHP830.52 |
| 40 - 80 | PHP40.487 | PHP809.74 |
| 100 - 180 | PHP39.475 | PHP789.50 |
| 200 - 380 | PHP38.489 | PHP769.78 |
| 400 + | PHP37.527 | PHP750.54 |
*price indicative
- RS Stock No.:
- 826-8841
- Mfr. Part No.:
- IRF7303TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF
This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.
Features & Benefits
• Enhanced efficiency with a low Rds(on) of 80 mΩ
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs
Applications
• Used in power supply circuits for voltage regulation
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance
What is the maximum gate-source voltage for this device?
The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.
How does the Rds(on) Value affect efficiency?
A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.
Can it operate at extreme temperatures?
Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.
What type of circuit boards is this compatible with?
It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.
How should one approach the installation of this component?
Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.
Related links
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 50 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC