Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC Infineon IRF9952TRPBF

RS Stock No.:: 145-9491
Mfr. Part No.:: IRF9952TRPBF
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC Infineon IRF9952TRPBF

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Subtotal (1 reel of 4000 units)**

PHP68,288.00

(exc. VAT)

PHP76,484.00

(inc. VAT)

Temporarily out of stock - back order for despatch 06/05/2025, delivery within 10 working days from desptach date*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per Unit	Per Reel**
4000 +	PHP17.072	PHP68,288.00

**price indicative

RS Stock No.:: 145-9491
Mfr. Part No.:: IRF9952TRPBF
Manufacturer:: Infineon

Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Infineon HEXFET Series MOSFET, 2.3A/3.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF9952TRPBF

This versatile MOSFET delivers high performance in a compact package, integrating both N-channel and P-channel configurations. It is designed for effective operation in various electronic applications, ensuring efficiency and dependability. With a maximum drain current of 3.5A and a maximum drain-source voltage of 30V, it is suitable for applications that require robust switching capabilities.

Features & Benefits

• Dual-channel configuration enhances design flexibility
• Surface mount design simplifies PCB assembly
• Low resistance (150mΩ and 400mΩ) reduces power loss
• High temperature operation (+150°C) ensures reliability in extreme conditions
• Improved gate charge characteristics enhance switching efficiency
• Isolated transistor configuration minimises cross-talk for cleaner signals

Applications

• Power management solutions
• Electric vehicle systems for improved efficiency
• Industrial automation and control
• Renewable energy systems for optimal performance
• Consumer electronics for enhanced device performance

How does the isolation of this device benefit my application?

The isolated configuration minimises interference among circuits, ensuring clean signals and preventing unwanted interactions between components.

What temperature range can this device handle during operation?

It can operate within a temperature range of -55°C to +150°C, making it suitable for extreme conditions.

Can I use this product in my surface mount PCB design?

Yes, its surface mount design allows for easy integration into PCB layouts, optimising space and enhancing thermal performance.

What factors should I consider when using this for switching applications?

Ensure the maximum gate-source voltage of ±20V is not exceeded and verify that the gate charge aligns with your switching frequency for optimal performance.

How do the specifications affect my power efficiency?

With low on-resistance and high continuous drain current, this MOSFET contributes to minimal power loss, enhancing overall energy efficiency in your circuit designs.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.3 A, 3.5 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	150 mΩ, 400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Transistor Material	Si
Width	4mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	6.1 nC @ 10 V, 6.9 nC @ 10 V
Length	5mm
Height	1.5mm
Minimum Operating Temperature	-55 °C