Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 2.4 A, 20 V Enhancement, 8-Pin MSOP

This image is representative of the product range

View all MOSFETs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
166-0905
Mfr. Part No.:
IRF7507TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

MSOP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.40Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±12 V

Maximum Power Dissipation Pd

1.25W

Typical Gate Charge Qg @ Vgs

8.2nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

3mm

Width

3 mm

Height

0.86mm

Standards/Approvals

EIA-481, EIA-541, ANSI Y14.5M-1982

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links