Infineon Isolated HEXFET 2 Type N, Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 8-Pin MSOP IRF7509TRPBF
- RS Stock No.:
- 301-192
- Distrelec Article No.:
- 302-84-022
- Mfr. Part No.:
- IRF7509TRPBF
- Manufacturer:
- Infineon
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PHP46.72
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PHP52.33
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- Final 32 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 - 9 | PHP46.72 |
| 10 - 49 | PHP45.32 |
| 50 - 99 | PHP43.97 |
| 100 - 249 | PHP42.65 |
| 250 + | PHP41.36 |
*price indicative
- RS Stock No.:
- 301-192
- Distrelec Article No.:
- 302-84-022
- Mfr. Part No.:
- IRF7509TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | MSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.86mm | |
| Width | 3 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Distrelec Product Id | 30284022 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type MSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 0.86mm | ||
Width 3 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Distrelec Product Id 30284022 | ||
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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