Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 165-5939
- Mfr. Part No.:
- IRF7316TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 4000 units)*
PHP98,000.00
(exc. VAT)
PHP109,760.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 + | PHP24.50 | PHP98,000.00 |
*price indicative
- RS Stock No.:
- 165-5939
- Mfr. Part No.:
- IRF7316TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 98mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | -0.78V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 98mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf -0.78V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7316TRPBF
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7303TRPBF
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type P-Channel MOSFET 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC IRF7309TRPBF
- Infineon Isolated HEXFET 2 Type P 3.5 A 8-Pin SOIC