Infineon OptiMOS P Type P-Channel MOSFET, 1.6 A, 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1

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PHP810.35

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PHP907.60

(inc. VAT)

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Per Pack*
50 - 50PHP16.207PHP810.35
100 - 200PHP15.081PHP754.05
250 - 450PHP13.438PHP671.90
500 - 950PHP12.611PHP630.55
1000 +PHP12.176PHP608.80

*price indicative

Packaging Options:
RS Stock No.:
823-5500
Distrelec Article No.:
304-44-428
Mfr. Part No.:
BSS308PEH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.6A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS P

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Height

1mm

Automotive Standard

AEC-Q101

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 130mΩ Maximum Drain Source Resistance - BSS308PEH6327XTSA1


This MOSFET is a P-channel enhancement device designed for surface-mount switching and control in compact electronic assemblies. It operates across a wide temperature range suitable for demanding environments and is built to function where low-voltage, moderate-current switching is required. The device is supplied in a SOT-23 package and is compatible with automotive-grade applications.

Features and Benefits:


• Low on-resistance of 130 mΩ reduces conduction losses
• Rated for 30V drain-source withstand for low-voltage systems
• Continuous drain current of 1.6A supports moderate loads
• Typical gate charge of 5 nC enables faster gate switching
• Maximum gate-source voltage of 20V allows robust drive margins
• Power dissipation capacity of 500 mW aids thermal management

Applications


• Suitable for load disconnect in 12V automotive systems
• Ideal for battery protection and power-path control
• Used with DC-DC converter input-stage switching
• Can be used for signal-level power switching in modules
• Appropriate for compact surface-mount power boards

What thermal extremes can it tolerate in operation?


It is specified to operate down to -55 °C and up to 150 °C, allowing use in environments with wide thermal variation.

What package and mounting method does it use?


It is supplied in a SOT-23 package designed for surface mounting on PCB assemblies.

How does the device behave regarding gate-drive design?


With a maximum VGS rating of 20V and a typical gate charge of 5 nC, it requires modest drive capability and fast gate drivers to achieve rapid switching.

Is the device suitable for automotive qualification requirements?


It conforms to AEC‑Q101 standards, making it acceptable for many automotive electronic designs.

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