DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 7.5 A, 40 V Enhancement, 8-Pin SOIC DMC4040SSD-13
- RS Stock No.:
- 823-3208
- Mfr. Part No.:
- DMC4040SSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP407.68
(exc. VAT)
PHP456.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,740 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP40.768 | PHP407.68 |
| 50 - 240 | PHP39.545 | PHP395.45 |
| 250 - 1240 | PHP38.357 | PHP383.57 |
| 1250 - 2490 | PHP37.207 | PHP372.07 |
| 2500 + | PHP36.091 | PHP360.91 |
*price indicative
- RS Stock No.:
- 823-3208
- Mfr. Part No.:
- DMC4040SSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.14W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | -0.7V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | |
| Width | 3.95 mm | |
| Length | 4.95mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.14W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf -0.7V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | ||
Width 3.95 mm | ||
Length 4.95mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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