MPN

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 100 units)*

PHP2,181.50

(exc. VAT)

PHP2,443.30

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

75,600 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
100 - 100	PHP21.815	PHP2,181.50
200 - 400	PHP21.27	PHP2,127.00
500 - 900	PHP20.738	PHP2,073.80
1000 - 1900	PHP20.22	PHP2,022.00
2000 +	PHP19.714	PHP1,971.40

*price indicative

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N, Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOT
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	140mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	4nC
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.27W
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Length	2.9mm
	Standards/Approvals	J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101
	Width	1.6 mm
	Height	0.9mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N, Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOT
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 140mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 4nC
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.27W
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Length 2.9mm
	Standards/Approvals J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101
	Width 1.6 mm
	Height 0.9mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7

FREE delivery for orders over ₱3,000.00

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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