Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

This image is representative of the product range

76700 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Price Each (In a Pack of 100)

PHP22.917

(exc. VAT)

PHP25.667

(inc. VAT)

Units	Per Unit	Per Pack*
100 - 100	PHP22.917	PHP2,291.70
200 - 400	PHP22.344	PHP2,234.40
500 - 900	PHP21.785	PHP2,178.50
1000 - 1900	PHP21.24	PHP2,124.00
2000 +	PHP20.709	PHP2,070.90

*price indicative

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

DMG6602SVT-7 Complementary Pair Enhancement MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Width	1.6mm
Transistor Material	Si
Height	0.9mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.