Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

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Bulk discount available

Subtotal (1 reel of 3000 units)**

PHP56,424.00

(exc. VAT)

PHP63,195.00

(inc. VAT)

75000 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

**price indicative

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	DiodesZetex
	Channel Type	N, P
	Maximum Continuous Drain Current	2.1 A, 3.4 A
	Maximum Drain Source Voltage	30 V
	Package Type	TSOT-26
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	100 mΩ, 140 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Maximum Power Dissipation	1.27 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	2.9mm
	Transistor Material	Si
	Width	1.6mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
	Height	0.9mm
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer DiodesZetex
	Channel Type N, P
	Maximum Continuous Drain Current 2.1 A, 3.4 A
	Maximum Drain Source Voltage 30 V
	Package Type TSOT-26
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 100 mΩ, 140 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Maximum Power Dissipation 1.27 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Length 2.9mm
	Transistor Material Si
	Width 1.6mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 7 nC @ 10 V, 9 nC @ 10 V
	Height 0.9mm
	Minimum Operating Temperature -55 °C

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