Vishay Si2377EDS Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 3-Pin SOT-23 SI2377EDS-T1-GE3
- RS Stock No.:
- 812-3145
- Mfr. Part No.:
- SI2377EDS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP433.16
(exc. VAT)
PHP485.14
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 6,660 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP21.658 | PHP433.16 |
| 40 - 80 | PHP20.596 | PHP411.92 |
| 100 - 180 | PHP20.397 | PHP407.94 |
| 200 - 380 | PHP20.202 | PHP404.04 |
| 400 + | PHP19.965 | PHP399.30 |
*price indicative
- RS Stock No.:
- 812-3145
- Mfr. Part No.:
- SI2377EDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si2377EDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si2377EDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2377EDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2343CDS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23