Vishay Si3433CDV Type P-Channel MOSFET, 6 A, 20 V Enhancement, 6-Pin TSOP SI3433CDV-T1-GE3
- RS Stock No.:
- 812-3142
- Mfr. Part No.:
- SI3433CDV-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP450.22
(exc. VAT)
PHP504.24
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,920 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP22.511 | PHP450.22 |
| 40 - 80 | PHP21.836 | PHP436.72 |
| 100 - 180 | PHP21.18 | PHP423.60 |
| 200 - 380 | PHP20.545 | PHP410.90 |
| 400 + | PHP19.929 | PHP398.58 |
*price indicative
- RS Stock No.:
- 812-3142
- Mfr. Part No.:
- SI3433CDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | Si3433CDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 3.3W | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series Si3433CDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 3.3W | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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