Vishay IRFR9120 Type P-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-252 IRFR9120TRPBF
- RS Stock No.:
- 812-0648
- Mfr. Part No.:
- IRFR9120TRPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP546.48
(exc. VAT)
PHP612.06
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,200 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 240 | PHP54.648 | PHP546.48 |
| 250 - 490 | PHP53.621 | PHP536.21 |
| 500 - 990 | PHP52.54 | PHP525.40 |
| 1000 - 1990 | PHP48.788 | PHP487.88 |
| 2000 + | PHP47.809 | PHP478.09 |
*price indicative
- RS Stock No.:
- 812-0648
- Mfr. Part No.:
- IRFR9120TRPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IRFR9120 | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -6.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IRFR9120 | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -6.3V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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