Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP548.625
(exc. VAT)
PHP614.45
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from May 20, 2026
- Plus 3,000 unit(s) shipping from May 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 225 | PHP21.945 | PHP548.63 |
| 250 - 600 | PHP21.287 | PHP532.18 |
| 625 - 1225 | PHP20.648 | PHP516.20 |
| 1250 - 2475 | PHP20.028 | PHP500.70 |
| 2500 + | PHP19.428 | PHP485.70 |
*price indicative
- RS Stock No.:
- 153-1876
- Mfr. Part No.:
- PMV27UPEAR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -5.6A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 4.15W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -5.6A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 4.15W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
LED driver
Power management
High-side loadswitch
Switching circuits
Related links
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