SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D

RS Stock No.:: 809-8991
Mfr. Part No.:: C2M0080120D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D

239 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Price Each

PHP1,555.04

(exc. VAT)

PHP1,741.64

(inc. VAT)

Units	Per Unit
1 - 9	PHP1,555.04
10 - 49	PHP1,508.40
50 - 99	PHP1,463.16
100 - 249	PHP1,419.27
250 +	PHP1,376.69

RS Stock No.:: 809-8991
Mfr. Part No.:: C2M0080120D
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	208 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	1.7V
Maximum Power Dissipation	208 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Typical Gate Charge @ Vgs	49.2 nC @ 20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	16.13mm
Width	5.21mm
Transistor Material	SiC
Minimum Operating Temperature	-55 °C
Height	21.1mm