Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 3-Pin TO-247 C3M0075120D
- RS Stock No.:
- 192-3376
- Mfr. Part No.:
- C3M0075120D
- Manufacturer:
- Wolfspeed
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP31,451.19
(exc. VAT)
PHP35,225.34
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 120 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP1,048.373 | PHP31,451.19 |
| 60 - 120 | PHP995.927 | PHP29,877.81 |
| 150 + | PHP928.045 | PHP27,841.35 |
*price indicative
- RS Stock No.:
- 192-3376
- Mfr. Part No.:
- C3M0075120D
- Manufacturer:
- Wolfspeed
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Maximum Power Dissipation Pd | 113.6W | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Maximum Power Dissipation Pd 113.6W | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.
Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Related links
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- Wolfspeed C3M Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 C3M0075120K
- Wolfspeed C3M Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- Wolfspeed C3M Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 C3M0075120J
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247