onsemi QFET Type P-Channel MOSFET, 1.33 A, 500 V Enhancement, 3-Pin TO-252 FQD3P50TM
- RS Stock No.:
- 808-9010
- Mfr. Part No.:
- FQD3P50TM
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP567.53
(exc. VAT)
PHP635.63
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 40 unit(s) shipping from December 29, 2025
- Plus 6,400 unit(s) shipping from January 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP56.753 | PHP567.53 |
| 20 - 40 | PHP55.049 | PHP550.49 |
| 50 - 90 | PHP51.746 | PHP517.46 |
| 100 - 190 | PHP47.089 | PHP470.89 |
| 200 + | PHP41.439 | PHP414.39 |
*price indicative
- RS Stock No.:
- 808-9010
- Mfr. Part No.:
- FQD3P50TM
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.33A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | QFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-45-656 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.33A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series QFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -5V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Distrelec Product Id 304-45-656 | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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