onsemi QFET Type P-Channel MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 10 units)*

PHP989.35

(exc. VAT)

PHP1,108.07

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP98.935PHP989.35
20 - 40PHP95.966PHP959.66
50 - 90PHP93.087PHP930.87
100 - 190PHP90.295PHP902.95
200 +PHP87.584PHP875.84

*price indicative

RS Stock No.:
862-8776
Mfr. Part No.:
FQPF7P20
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

690mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

-5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

45W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.9 mm

Height

16.07mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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