onsemi UltraFET N-Channel MOSFET, 33 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 807-8714
- Mfr. Part No.:
- HUF76423P3
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP704.82
(exc. VAT)
PHP789.40
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 390 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP70.482 | PHP704.82 |
| 20 - 40 | PHP67.396 | PHP673.96 |
| 50 - 90 | PHP62.467 | PHP624.67 |
| 100 - 190 | PHP58.651 | PHP586.51 |
| 200 + | PHP58.051 | PHP580.51 |
*price indicative
- RS Stock No.:
- 807-8714
- Mfr. Part No.:
- HUF76423P3
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | UltraFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 85W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series UltraFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 85W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.7mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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