onsemi UltraFET Type N-Channel MOSFET, 75 A, 80 V Enhancement, 3-Pin TO-220 HUF75645P3

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Subtotal (1 pack of 2 units)*

PHP269.04

(exc. VAT)

PHP301.32

(inc. VAT)

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  • 440 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP134.52PHP269.04
10 - 38PHP121.245PHP242.49
40 - 98PHP116.34PHP232.68
100 - 198PHP105.975PHP211.95
200 +PHP103.265PHP206.53

*price indicative

Packaging Options:
RS Stock No.:
807-8708
Mfr. Part No.:
HUF75645P3
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

80V

Series

UltraFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

195nC

Forward Voltage Vf

1.25V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

270W

Maximum Operating Temperature

175°C

Height

16.3mm

Standards/Approvals

No

Width

4.7 mm

Length

10.67mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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