N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS Stock No.:: 802-4357
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

25 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Price Each

PHP1,584.27

(exc. VAT)

PHP1,774.38

(inc. VAT)

Units	Per Unit
1 - 9	PHP1,584.27
10 - 49	PHP1,582.69
50 - 99	PHP1,319.71
100 - 249	PHP1,318.13
250 +	PHP1,317.06

RS Stock No.:: 802-4357
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

IXFB210N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	PLUS264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	20.29mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	268 nC @ 10 V
Width	5.31mm
Transistor Material	Si
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series